tm november 2007 fdp12n50u / fdpf12n50u t n-channel mosfet ?2007 fairchild semiconductor corporation fdp12n50u / FDPF12N50UT rev. a www.fairchildsemi.com 1 ultra frfet tm fdp12n50u / FDPF12N50UT n-channel mosfet, frfet 500v, 10a, 0.8 ? features ?r ds(on) = 0.65 ? ( typ.)@ v gs = 10v, i d = 5a ? low gate charge ( typ. 21nc) ? low c rss ( typ. 11pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. d g s to-220f fdpf series g s d to-220 fdp series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp12n50u FDPF12N50UT units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 10 10* a -continuous (t c = 100 o c) 6 6* i dm drain current - pulsed (note 1) 40 40* a e as single pulsed avalanche energy (note 2) 456 mj i ar avalanche current (note 1) 10 a e ar repetitive avalanche energy (note 1) 16.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 165 42 w - derate above 25 o c 1.33 0.3 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp12n50u FDPF12N50UT units r jc thermal resistance, junction to case 0.75 3.0 o c/w r cs thermal resistance, junction to ambient 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp12n50u fdp12n50u to-220 - - 50 FDPF12N50UT FDPF12N50UT to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 25 a v ds = 400v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 5a - 0.65 0.8 ? g fs forward transconductance v ds = 40v, i d = 5a (note 4) -11-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1050 1395 pf c oss output capacitance - 140 190 pf c rss reverse transfer capacitance - 11 17 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 10a v gs = 10v (note 4, 5) -2130nc q gs gate to source gate charge - 6 - nc q gd gate to drain ?miller? charge - 9 - nc t d(on) turn-on delay time v dd = 250v, i d = 10a r g = 25 ? (note 4, 5) -3580ns t r turn-on rise time - 45 100 ns t d(off) turn-off delay time - 60 130 ns t f turn-off fall time - 35 80 ns i s maximum continuous drain to source diode forward current - - 10 a i sm maximum pulsed drain to source diode forward current - - 40 a v sd drain to source diode forward voltage v gs = 0v, i sd = 10a - - 1.6 v t rr reverse recovery time v gs = 0v, i sd = 10a di f /dt = 100a/ s (note 4) -65-ns q rr reverse recovery charge - 0.1 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 9mh, i as = 10a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 10a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 110 1 10 30 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 20 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1 10 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 30 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 0 500 1000 1500 2000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 5 10 15 20 25 0 2 4 6 8 10 *note: i d = 10a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature - FDPF12N50UT figure 9. maximum drain current vs. case temperature - FDPF12N50UT figure 10. transient thermal response curve - FDPF12N50UT -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 20 s 80 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 800 dc 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 5 t 1 p dm t 2
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 7 mechanical dimensions to-220
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 8 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 dimensions in millimeters
fdp12n50u / fdpf12n50u t n-channel mosfet fdp12n50u / FDPF12N50UT rev. www.fairchildsemi.com 9 trademarks the following are registered and unregistered tr ademarks and service marks fairchild semi conductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty ther ein, which covers these products. life support policy fairchild?s products are not authorized for use as critical comp onents in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) w hose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminary dat a; supplementary data will be pub- lished at a later date. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i31
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